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Transistors
DTC144TM / DTC144TE / DTC144TUA DTC144TKA / DTC144TSA
Digital transistors (built-in resistor)
DTC144TM / DTC144TE / DTC144TUA / DTC144TKA / DTC144TSA
Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. Equivalent circuit
C B R1 E
B : Base C : Collector E : Emitter
Structure NPN digital transistor (Built-in resistor type)
External dimensions (Unit : mm)
DTC144TM
0.2
1.2 0.32
DTC144TE
1.2 0.8
(2) (3) (1)
1.60.2 1.00.1
0.2
0.4 0.4 0.8
+0.1 0.2 -0.05 (1)
0.5 0.5
0.2+0.1 -0.05
0.80.1 1.60.2
0.70.1 0.550.1
(2)
0.22
0 to 0.1
0.5
ROHM : VMT3
0.15Max.
(1) Base (2) Emitter (3) Collector
(3)
0.13 0~0.1
ROHM : EMT3
0.3 +0.1 -0.05
0.150.05
(1) Emitter (2) Base (3) Collector
Abbreviated symbol : 06
Abbreviated symbol : 06
DTC144TUA
2.00.2 1.30.1 0.65 0.65 (1) (2)
1.250.1 2.10.1
DTC144TKA
0.90.1 0.2 0.70.1
(1)
2.90.2 1.90.2 0.95 0.95 (2)
2.80.2 1.6-0.1
1.1+0.2 -0.1 0.80.1
0.1Min.
0 to 0.1
0.3Min.
0 to 0.1
(3)
(3)
0.3+0.1 -0
0.1Min.
+0.2
0.150.05
ROHM : UMT3 EIAJ : SC-70
All terminals have same dimensions
(1) Emitter (2) Base (3) Collector
0.4-0.05
+0.1
0.15-0.06
+0.1
Abbreviated symbol : 06
ROHM : SMT3 EIAJ : SC-59
All terminals have same dimensions
Abbreviated symbol : 06
(1) Emitter (2) Base (3) Collector
DTC144TSA
30.2
40.2
20.2
(15Min.)
0.45+0.15 -0.05
3Min.
5
2.5 +0.4 -0.1
0.5
+0.15 0.45 -0.05
ROHM : SPT EIAJ : SC-72
(1) (2) (3)
(1) Emitter (2) Collector (3) Base
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Transistors
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg 150
DTC144TM / DTC144TE / DTC144TUA DTC144TKA / DTC144TSA
Limits(DTC144T ) M E UA 50 50 5 100 200 150 -55 to +150 300 KA SA Unit V V mA mW C C
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency Transition frequency of the device Symbol Min. BVCBO BVEBO ICBO IEBO VCE(sat) hFE R1 fT 50 50 5 - - - 100 32.9 - Typ. - - - - - - 250 47 250 Max. - - - 0.5 0.5 0.3 600 61.1 - Unit V V V A A V - k MHz IC=50A IC=1mA IE=50A VCB=50V VEB=4V IC/IB=5mA/0.5mA VCE=5V, IC=1mA - VCE=10V, IE= -5mA, f=100MHz Conditions
Collector-emitter breakdown voltage BVCEO
Packaging specifications
Package Packaging type Type Code Basic ordering unit (pieces) DTC144TM DTC144TE DTC144TUA DTC144TKA DTC144TSA - - - - - - - - - - VMT3 Taping T2L 8000 EMT3 Taping TL 3000 - UMT3 Taping T106 3000 - - SMT3 Taping T146 3000 - - - SPT Taping TP 5000 - - - -
2/3
Transistors
Electrical characteristic curves
1k 500
DTC144TM / DTC144TE / DTC144TUA DTC144TKA / DTC144TSA
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=5V
1 500m 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m Ta=100C 25C -40C
lC/lB=10
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=100C 25C -40C
5m 10m 20m
50m 100m
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage vs. collector current
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Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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